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TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features * High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz * High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz * Broadband internally matched * Hermetically sealed package RF Performance Specifications (Ta = 25C)
Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS add Tch VDS x IDS x Rth (c-c) VDS = 9V f = 14.0 - 14.5 GHz A % C - - - 0.85 23 - 1.1 - 60 Condition Unit dBm dB Min. 32.5 5.5 Typ. 33.5 6.5 Max - -
TIM1414-2
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Electrical Characteristics (Ta = 25C)
Characteristic Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth (c-c)
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Condition VDS = 3V IDS = 1.0A VDS = 3V IDS = 30 mA VDS = 3V VGS = 0V IGS = -30 A Channel to Case Unit mS V A V C/W Min. - -2 - -5 - Typ. 600 -3.5 2.0 - 5 Max. - -5 2.6 - 6
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The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
TOSHIBA CORPORATION
MW50270196
1/5
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TIM1414-2
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc = 25C) Channel Temperature Storage Temperature Symbol VDS VGS ID PT Tch Tstg Unit V V A W C C Rating 15 -5 2.6 15 175 -65 ~ 175
Package Outline (2-9D1B)
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Handling Precautions for Packaged Type Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C.
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2/5 MW50270196
TOSHIBA CORPORATION
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TIM1414-2
RF Performances
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TOSHIBA CORPORATION
MW50270196
3/5
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TIM1414-2
Power Dissipation vs. Case Temperature
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4/5 MW50270196
TOSHIBA CORPORATION
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TIM1414-2
TIM1414-2 S-Parameters (Magn. and Angles)
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TOSHIBA CORPORATION
MW50270196
5/5
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